Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/9822
DC FieldValueLanguage
dc.contributor.advisor李明威zh_TW
dc.contributor.author賴明宏zh_TW
dc.date2001zh_TW
dc.date.accessioned2014-06-06T06:43:46Z-
dc.date.available2014-06-06T06:43:46Z-
dc.identifier.urihttp://hdl.handle.net/11455/9822-
dc.description.abstract本論文討論MgIn2O4在塊材燒結製作過程中,受溫度、時間之種種影響,所以我們要決定一個最佳化的工作條件以利於將來鍍膜能夠成功.而在鍍膜時對氧含量之條件取捨,使我們了解氧對於光學性質和電學性質有一個決定性的影響.其中氧量高卻造成光譜穿透率的下降,印證了理論當自由電子濃度高會造成電漿頻率升高,而導致可見光穿透下降的原因.zh_TW
dc.description.abstractOptical and electrical properties of thin films of prepared by RF Indium-Tin-Oxide(ITO) and Magnesium_Indium-_Oxide(MgIn2O4) Author: M. H. Lai Porfesser: M. W. Lee We study the effect of sintering temperature, time on the preparation of MgIn2O4 target. The prepared target was analysed by X-ray diffraction and atomic analyser. Optimal condition for target preparation is obtained. ITO and MgIn2O4 films were prepared by Rf sputtering electrical measurements revealed that the resistivity of the synthesiyed films is in the range 1.2k-2.6 μΩ-cm. Optical transmission measure reavealed the transmission is in the range og 80-90%. Analysis indicated that the most important parameter in the suptted films is the Oxygen content. For high O content, the films exhibit high transmission and low resist. For low O-content, the films exhibit lower temperature and extrenly high reisit.en_US
dc.description.tableofcontents目 錄 第一章 前 言 --------------------------------------------------- 1 1-1 研究動機 ------------------------------------------------ 1 1-2 ITO發展歷史-------------------------------------------- 2 1-3 原理簡介 ---------------------------------------------- 4 1-3-1電學性質介紹 ------------------------------ 4 1-3-2 光學性質介紹 ----------------------------- 5 第二章 樣本製作 ---------------------------------------------- 9 2-1 樣本流程圖 ------------------------------------------ 9 2-1-1粉末來源 ------------------------------------ 10 2-1-2粉末配製 ------------------------------------ 11 2-1-3初 燒 ------------------------------------ 12 2-1-4 壓 片 ------------------------------------- 13 2-1-5 燒 結 ------------------------------------- 13 2-2 粉末繞射量測 -------------------------------------- 14 2-2-1燒結與X-ray量測結果 ----------------- 15 2-3 濺 鍍 ------------------------------------------------ 22 2-3-1 基底清洗 --------------------------------- 23 2-3-2 系統操作程序 --------------------------- 24 第三章 儀器測量結果 ---------------------------------------- 27 3-1 光譜量測 --------------------------------------------- 27 3-1-1光譜實驗步驟 ------------------------------ 28 3-1-2成膜之工作件 ------------------------------ 30 3-1-3光譜分析 --------------------------------- 31 3-2 電阻量測 -------------------------------------------- 38 3-2-1 電阻量測系統------------------------------- 41 3-2-2 電阻分析 ---------------------------------- 42 第四章 總 結 ----------------------------------------------- 46 參考資料 --------------------------------------------------------- 48zh_TW
dc.language.isozh_TWzh_TW
dc.publisher材料工程學研究所zh_TW
dc.subjectMgen_US
dc.subjectM. W. Leeen_US
dc.titleMgIn2O4 與氧化銦錫(ITO)之光電性質分析比較zh_TW
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1zh_TW-
item.grantfulltextnone-
Appears in Collections:材料科學與工程學系
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