Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/98394
標題: 提升深紫外光覆晶發光二極體光萃取效率之研究
Study on Light Extraction Efficiency of Deep UV-LEDs
作者: 賴彥丞
Yan-Chung Lai
關鍵字: 奈米壓印;藍寶石奈米圖形化結構;深紫外光發光二極體;Nano-imprint lithography;NPSS;Deep UV-LEDs
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摘要: 
本研究利用奈米壓印技術在藍寶石基板製作奈米圖形化結構(Nano-Pattern Sapphire Substrate, NPSS)應用於覆晶式深紫外光發光二極體(Deep Ultraviolet Light-Emitting Diode, DUV-LED),藉此改善元件光萃取效率(Light-Extraction Efficiency, LEE)。
使用TracePro模擬軟體進行光線追跡的模擬探討不同幾何圖形結構對於覆晶式DUV-LED的光提取效率。元件結構使用Ni/Au作為接觸層和Al作為反射鏡。奈米壓印圖形化結構有錐狀與孔洞兩種,在錐狀圖形中其尺寸分別為2.5 um、200 nm與400 nm,而孔洞狀圖形尺寸為350 nm、750 nm。 在350 mA電流注入下,與傳統具反射鏡覆晶式DUV-LED相比nano-imprint 2.5 μm-LED、nano-imprint 750 nm hole-LED、nano-imprint 200 nm-LED、nano-imprint 350 nm hole-LED、nano-imprint 400 nm-LED之光輸出功率分別提升9.9、17.2、25.7、41.3及50.2%。在光電轉換效率方面, nano-imprint 2.5 μm-LED、nano-imprint 750 nm hole-LED、nano-imprint 200 nm-LED、nano-imprint 350 nm hole-LED、nano-imprint 400 nm-LED的DUV-LED與傳統具反射鏡覆晶式DUV-LED相比分別提升16.7、25、36.1、52.8及69.4 %。而在光萃取效率方面, nano-imprint 2.5 μm-LED、nano-imprint 750 nm hole-LED、nano-imprint 200 nm-LED、nano-imprint 350 nm hole-LED、nano-imprint 400 nm-LED的DUV-LED與傳統具反射鏡覆晶式DUV-LED相比分別提升9.7、17.6、25.4、41.4及49.8 %。這些結果清楚地表明,在傳統式覆晶式元件,利用奈米壓印技術在藍寶石基板上製作幾何結構確實可以有效的提升覆晶式DUV-LEDs的光輸出功率、光萃取效率與光電轉換效率。
URI: http://hdl.handle.net/11455/98394
Rights: 不同意授權瀏覽/列印電子全文服務
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