Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/9897
DC FieldValueLanguage
dc.contributor.advisor張立信zh_TW
dc.contributor.advisorLi-Shin Changen_US
dc.contributor.author曾建樺zh_TW
dc.contributor.authorTseng, Chien-Huaen_US
dc.date2004zh_TW
dc.date.accessioned2014-06-06T06:43:53Z-
dc.date.available2014-06-06T06:43:53Z-
dc.identifier.urihttp://hdl.handle.net/11455/9897-
dc.description.abstract隨著電子資訊產品朝著輕、薄、短、小發展的趨勢下,以塑膠材料取代玻璃材料做為平面顯示器的面板,不但可以大幅降低其重量,且塑膠材料具備耐衝擊、可連續性的滾筒製程及可撓曲性的優點。但是塑膠基板並沒有辦法像玻璃基板能有效的阻絕水氣、氧氣滲透,會降低元件壽命與品質,因此將在塑膠基板上鍍上一層氣體阻絕層,來改善這個問題。 本實驗使用射頻磁控濺鍍法在PET基材上沈積氧化矽薄膜,分別改變不同製程參數為氧氣流量比例、工作壓力、射頻功率密度及鍍膜時間,探討其製程參數對其微觀結構、化學成分、表面粗糙度、光穿透性質、水氣滲透率、氧氣穿透率及撓曲性質的影響。 由實驗的分析結果顯示,當鍍膜製程參數為氧氣流量比例40%、工作壓力2mTorr、射頻功率密度為4.9W/cm2及鍍膜時間為240分鐘的條件下,所沈積的氧化矽薄性質有較佳的阻絕水氣、氧氣滲透能力。其水氣滲透率為2.6 g/m2-day-atm,氧氣滲透率為16.1 cc/m2- day-atm,在撓曲實驗中,薄膜厚度較厚其抵抗撓曲測試的能力較差,產生較多的裂縫數量,造成其抵抗水氣、氧氣滲透能力變差。zh_TW
dc.description.abstractWith the trends of developing lighter, thinner, shorter and smaller electronic information products, plastic materials substituting for glasses as the substrate of flat panel display can not only reduce FPD's weight but also possess unique advantages such as high impact resistance, continuous roll to roll processing technology and flexibility. Glass substrates can prevent the permeation of water vapors and oxygen effectively but plastic substrates can't. It would lower the device lifetime and quality. Therefore, gas barrier films would be deposited on the plastics substrates in order to solve the problem. In this study, silicon oxide films were deposited on the polyethylene terephthalate plastic substrates by reactive RF magnetron sputtering with a silicon target. Process parameters inclusive of oxygen flow ratio, work pressure, RF power density and deposition time were varied. The effects of these process parameters on the microstructure, chemical composition, surface roughness, light transmittance, water vapor transmission rate (WVTR), oxygen transmission rate (OTR) and flexible property were discussed. It is found that the silicon oxide film with the optimum protecting against vapor permeation were deposited as the oxygen flow ratio is 40%, the RF power density is 4.9 W/cm2, work pressure is 2 mTorr and deposition time is 240 min. The minimum WVTR is 2.6 g/m2-day-atm and OTR is 16.1 cc/ m2-day-atm. In the flexible test, the thicker silicon oxide films possess worse ability to defend the flexible tests. More cracks produced in thicker films during flexible tests result in higher permeation rate of water vapors and oxygen.en_US
dc.description.tableofcontents第一章 緒論---------------------------------------1 1.1 前言----------------------------------------------1 1.2 研究目的------------------------------------------2 第二章 理論與文獻回顧-----------------------------6 2.1 濺鍍理論------------------------------------------6 2.1.1 濺鍍--------------------------------------------6 2.1.2 電漿--------------------------------------------7 2.1.3 射頻濺鍍系統------------------------------------8 2.1.4 磁控濺鍍系統------------------------------------8 2.1.5 自生偏壓----------------------------------------9 2.1.6 薄膜沈積機構-----------------------------------11 2.1.7 薄膜微觀結構-----------------------------------12 2.1.8 基材偏壓的效應---------------------------------14 2.1.9 電漿前處理基材表面-----------------------------14 2.2 氧化矽的性質-------------------------------------16 2.3 滲透理論-----------------------------------------17 第三章 實驗步驟與方法----------------------------29 3.1 實驗流程-----------------------------------------29 3.1.1 靶材與試片準備---------------------------------29 3.2 薄膜沈積-----------------------------------------29 3.2.1 鍍膜設備---------------------------------------29 3.2.2 鍍膜步驟---------------------------------------31 3.2.3 鍍膜方式---------------------------------------32 3.3 分析測試-----------------------------------------33 3.3.1 膜厚測量---------------------------------------33 3.3.2 X光光電子能譜儀-------------------------------33 3.3.3 可見光光譜儀-----------------------------------34 3.3.4 水蒸氣透過率測試儀-----------------------------34 3.3.5 氧氣透過率測試儀-------------------------------35 3.3.6 原子力顯微鏡-----------------------------------36 3.3.7 場發射掃描式電子顯微鏡-------------------------37 3.3.8 撓曲測試---------------------------------------38 第四章 結果與討論--------------------------------49 4.1 通入不同氧氣流量比例-----------------------------49 4.1.1 沈積速率之討論---------------------------------49 4.1.2 成分分析之討論---------------------------------50 4.1.3 場發射電子顯微鏡之分析-------------------------50 4.1.4 表面形貌之分析---------------------------------51 4.1.5 水氣穿透率與氧氣穿透率結果之討論---------------51 4.1.6 可見光光譜儀之分析-----------------------------52 4.2 改變工作壓力-------------------------------------53 4.2.1 沈積速率之討論---------------------------------53 4.2.2 成分分析之討論---------------------------------53 4.2.3 場發射電子顯微鏡之分析-------------------------54 4.2.4 表面形貌之分析---------------------------------54 4.2.5 水氣穿透率與氧氣穿透率結果之討論---------------55 4.2.6 可見光光譜儀之分析-----------------------------55 4.3 改變射頻功率密度---------------------------------56 4.3.1 沈積速率之討論---------------------------------56 4.3.2 成分分析之討論---------------------------------57 4.3.3 場發射電子顯微鏡之分析-------------------------57 4.3.4 表面形貌之分析---------------------------------58 4.3.5 水氣穿透率與氧氣穿透率結果之討論---------------58 4.3.6 可見光光譜儀之分析-----------------------------59 4.4 改變鍍膜時間-------------------------------------60 4.4.1 沈積速率之討論---------------------------------60 4.4.2 場發射電子顯微鏡之分析-------------------------61 4.4.3 表面形貌之分析---------------------------------61 4.4.4 水氣穿透率與氧氣穿透率結果之討論---------------62 4.4.5 可見光光譜儀之分析-----------------------------63 4.4.6 撓曲試驗之結果---------------------------------63 第五章 結論-------------------------------------106 參考資料-----------------------------------------108zh_TW
dc.language.isoen_USzh_TW
dc.publisher材料工程學研究所zh_TW
dc.subjectsilicon oxide thin filmsen_US
dc.subject氧化矽薄膜zh_TW
dc.subjectPETen_US
dc.subjectradio-frequency magnetron sputteringen_US
dc.subject聚對苯二甲酸二乙酯zh_TW
dc.subject射頻磁控濺鍍法zh_TW
dc.titleThe preparation and characterization of the silicon oxide thin films deposited on PET substrates by radio-frequency magnetron sputteringen_US
dc.title以射頻磁控濺鍍法在PET基材上製備氧化矽薄膜zh_TW
dc.typeThesis and Dissertationzh_TW
item.openairetypeThesis and Dissertation-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en_US-
Appears in Collections:材料科學與工程學系
Show simple item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.