Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99137
標題: Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping
作者: Chang, Yuan-Ming
Yang, Shih-Hsien
Lin, Che-Yi
Chen, Chang-Hung
Lien, Chen-Hsin
Jian, Wen-Bin
Ueno, Keiji
Suen, Yuen-Wuu
Tsukagoshi, Kazuhito
Lin, Yen-Fu
張原銘
關鍵字: 2D electronics;MoTe2;doping;logic circuits;transition metal dichalcogenide
Project: Advanced materials (Deerfield Beach, Fla.), Volume 30, Issue 13, Page(s) e1706995.
摘要: 
Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance.
URI: http://hdl.handle.net/11455/99137
DOI: 10.1002/adma.201706995
Appears in Collections:物理學系所

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