Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99137
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dc.contributor.authorChang, Yuan-Mingzh_TW
dc.contributor.authorYang, Shih-Hsienzh_TW
dc.contributor.authorLin, Che-Yizh_TW
dc.contributor.authorChen, Chang-Hungzh_TW
dc.contributor.authorLien, Chen-Hsinzh_TW
dc.contributor.authorJian, Wen-Binzh_TW
dc.contributor.authorUeno, Keijizh_TW
dc.contributor.authorSuen, Yuen-Wuuzh_TW
dc.contributor.authorTsukagoshi, Kazuhitozh_TW
dc.contributor.authorLin, Yen-Fuzh_TW
dc.contributor.author張原銘zh_TW
dc.date2018-03-
dc.date.accessioned2019-10-16T03:08:01Z-
dc.date.available2019-10-16T03:08:01Z-
dc.identifier.urihttp://hdl.handle.net/11455/99137-
dc.description.abstractPrecisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance.zh_TW
dc.language.isoenzh_TW
dc.relationAdvanced materials (Deerfield Beach, Fla.), Volume 30, Issue 13, Page(s) e1706995.zh_TW
dc.subject2D electronicszh_TW
dc.subjectMoTe2zh_TW
dc.subjectdopingzh_TW
dc.subjectlogic circuitszh_TW
dc.subjecttransition metal dichalcogenidezh_TW
dc.titleReversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Dopingzh_TW
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1002/adma.201706995zh_TW
dc.awards2018zh_TW
item.fulltextwith fulltext-
item.grantfulltextrestricted-
item.openairetypeJournal Article-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
Appears in Collections:物理學系所
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