Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99141
標題: High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping
作者: Li, Mengjiao
Lin, Che-Yi
Yang, Shih-Hsien
Chang, Yuan-Ming
Chang, Jen-Kuei
Yang, Feng-Shou
Zhong, Chaorong
Jian, Wen-Bin
Lien, Chen-Hsin
Ho, Ching-Hwa
Liu, Heng-Jui
Huang, Rong
Li, Wenwu
Lin, Yen-Fu
林彥甫
Chu, Junhao
關鍵字: 2D electronics;InSe transistors;logic circuits;low‐frequency noise;surface charge transfer doping
Project: Advanced materials (Deerfield Beach, Fla.), Volume 30, Issue 44, Page(s) e1803690.
摘要: 
Tunability and stability in the electrical properties of 2D semiconductors pave the way for their practical applications in logic devices. A robust layered indium selenide (InSe) field-effect transistor (FET) with superior controlled stability is demonstrated by depositing an indium (In) doping layer. The optimized InSe FETs deliver an unprecedented high electron mobility up to 3700 cm2 V-1 s-1 at room temperature, which can be retained with 60% after 1 month. Further insight into the evolution of the position of the Fermi level and the microscopic device structure with different In thicknesses demonstrates an enhanced electron-doping behavior at the In/InSe interface. Furthermore, the contact resistance is also improved through the In insertion between InSe and Au electrodes, which coincides with the analysis of the low-frequency noise. The carrier fluctuation is attributed to the dominance of the phonon scattering events, which agrees with the observation of the temperature-dependent mobility. Finally, the flexible functionalities of the logic-circuit applications, for instance, inverter and not-and (NAND)/not-or (NOR) gates, are determined with these surface-doping InSe FETs, which establish a paradigm for 2D-based materials to overcome the bottleneck in the development of electronic devices.
URI: http://hdl.handle.net/11455/99141
DOI: 10.1002/adma.201803690
Appears in Collections:奈米科學研究所

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