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|標題:||Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process||作者:||Lin, Yen-Nan
|關鍵字:||Hall effect;magnetic field;magnetotransistor;micro sensor||Project:||Micromachines, Volume 9, Issue 8||摘要:||
Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF.
|Appears in Collections:||機械工程學系所|
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