Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99233
標題: Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications
作者: Yi-Yun Chen
Yuan-Chang Jhang
Chia-Jung Wu
Hsiang Chen
Yung-Sen Lin
Chia-Feng Lin
林佳鋒
關鍵字: InGaN;porous GaN;insulating GaOx;current confinement aperture structure
Project: Crystals, Volume 8, Issue 11, Page 418
摘要: 
An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an electrochemical wet-etching process. Porous GaN layers surrounding the mesa region were transformed into insulating GaOx layers in a reflector structure through a lateral photoelectrochemical (PEC) oxidation process. The electroluminescence emission intensity was localized at the central mesa region by forming the insulating GaOx layers in a reflector structure as a current confinement aperture structure. The PEC-LED structure with a porous GaN reflector and a current-confined aperture surrounded by insulating GaOx layers has the potential for nitride-based resonance cavity light source applications.
URI: http://hdl.handle.net/11455/99233
DOI: 10.3390/cryst8110418
Appears in Collections:材料科學與工程學系

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