Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99236
標題: Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes
作者: Ho, Hsiang-Hsi
Lin, Chun-Lung
Tsai, Wei-Che
Hong, Liang-Zheng
Lyu, Cheng-Han
Hsu, Hsun-Feng
許薰丰
關鍵字: Dielectrophoresis;Joule heating;Nanowire;Photodetector;Silicon
Project: Nanoscale research letters, Volume 13, Issue 1, Page(s) 21.
摘要: 
We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determined by voltage sweep direction due to the asymmetric Joule heating effect that occurred in the electrical measurement process. The photosensing properties of the rectifying devices were investigated. It reveals that when the rectifying device was in reverse-biased mode, the excellent photoresponse was achieved due to the strong built-in electric field at the junction interface. It is expected that rectifying silicon nanowire-based devices through this novel and facile method can be potentially applied to other applications such as logic gates and sensors.
URI: http://hdl.handle.net/11455/99236
ISSN: 1931-7573
DOI: 10.1186/s11671-017-2423-z
Appears in Collections:材料科學與工程學系

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