Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99237
標題: Effects of high substrate temperature during pulsed laser deposition on the quality of aluminum-doped gallium oxide and its photodetector characteristics
作者: Shuo-Huang Yuan
袁碩璜
Sin-Liang Ou
Chao-Chun Wang
Shiau-Yuan Huang
Chien-Ming Chen
Ku-Yen Lin
Yi-An Chen
Dong-Sing Wuu
Project: Jpn. J. Appl. Phys. 57 070301
摘要: 
We report on the effects of substrate temperature (600–800 °C) on metal–semiconductor–metal photodetectors (PDs) fabricated with aluminum-doped gallium oxide (AGO) films by pulsed laser deposition. The crystal quality of the AGO films was improved by increasing the substrate temperature. Because of the AGO(400) appearance, the d-spacing of AGO$(\bar{2}01)$ decreased, whereas the strain of this plane increased. This could be explained by the formation of the AGO(400) plane in the films, generating a compressive strain in the AGO$(\bar{2}01)$ plane. The AGO PDs showed a maximum absorption at a wavelength of 240 nm, and the enhanced crystal quality would benefit the device performance.
URI: http://hdl.handle.net/11455/99237
DOI: 10.7567/JJAP.57.070301
Appears in Collections:材料科學與工程學系

Files in This Item:
File Description SizeFormat Existing users please Login
248.pdf809.15 kBAdobe PDFThis file is only available in the university internal network    Request a copy
Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.