Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99241
標題: Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy
作者: Tasi, Chi-Tsung
Wang, Wei-Kai
Ou, Sin-Liang
Huang, Shih-Yung
Horng, Ray-Hua
Wuu, Dong-Sing
武東星
關鍵字: AlGaN;hydride vapor phase epitaxy;nanopatterned sapphire substrate;stress;transmission electron microscopy
Project: Nanomaterials (Basel, Switzerland), Volume 8, Issue 9
摘要: 
In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/AlN/NPSS epilayers were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results indicate that the crystal quality of the AlGaN film could be improved when grown on the AlN/NPSS template. The screw threading dislocation (TD) density was reduced to 1.4 × 10⁸ cm-2 for the AlGaN epilayer grown on the AlN/NPSS template, which was lower than that of the sample grown on a flat c-plane sapphire substrate (6.3 × 10⁸ cm-2). As examined by XRD measurements, the biaxial tensile stress of the AlGaN film was significantly reduced from 1,187 MPa (on AlN/NPSS) to 38.41 MPa (on flat c-plane sapphire). In particular, an increase of the Al content in the overgrown AlGaN layer was confirmed by the TEM observation. This could be due to the relaxation of the in-plane stress through the AlGaN and AlN/NPSS template interface.
URI: http://hdl.handle.net/11455/99241
ISSN: 2079-4991
DOI: 10.3390/nano8090704
Appears in Collections:材料科學與工程學系

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