Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99242
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dc.contributor.authorTzu-Yu Wangzh_TW
dc.contributor.authorChi-Tsung Tasizh_TW
dc.contributor.authorKu-Yen Linzh_TW
dc.contributor.authorSin-Liang Ouzh_TW
dc.contributor.authorRay-Hua Horngzh_TW
dc.contributor.authorDong-Sing Wuuzh_TW
dc.contributor.author武東星zh_TW
dc.date2018-06-05-
dc.date.accessioned2019-11-20T03:42:07Z-
dc.date.available2019-11-20T03:42:07Z-
dc.identifier.urihttp://hdl.handle.net/11455/99242-
dc.description.abstractA low defect-density AlN template film using V/III ratio modulation and nano-patterned sapphire substrate (NPSS) was achieved by metalorganic chemical vapor deposition. In contrast to conventional high-quality AlN/NPSS obtained with high coalescence thickness (>6 μm) using high growth temperatures (≥1250 oC), this study reveals the high crystallinity of AlN with the lower thickness of 2.55 μm grown under a lower temperature of 1130 °C. It could effectively increase the heater lifetime and reduce the epi-wafer warpage. The growth of AlN/NPSS dominated by epitaxial lateral overgrowth achieves a dramatic reduction of full width at half maximum values along ) plane from 1640 to 714 arcsec, and lowest dislocation density of approximately 1 × 108 cm−2, as well as a ultra-low etching pit density of 2.3 × 105 cm−2. The crack-free AlN/NPSS with a compressive stress owing to the tensile stress was relaxed by the existence of some key-shaped holes upon the patterned region. Details of the surface evolution, mechanism and dislocation behavior of AlN/NPSS will be discussed and these results demonstrate this low-defect template technique of high potential for AlGaN-based device applications.zh_TW
dc.language.isoen_USzh_TW
dc.relationApplied Surface Science, Volume 455, 15 October 2018, Pages 1123-1130zh_TW
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S0169433218315836zh_TW
dc.subjectAlNzh_TW
dc.subjectV/III ratio modulationzh_TW
dc.subjectNano-patterned sapphirezh_TW
dc.subjectEtch pit densityzh_TW
dc.titleSurface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor depositionzh_TW
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.apsusc.2018.06.017zh_TW
dc.awards2018zh_TW
item.grantfulltextrestricted-
item.fulltextwith fulltext-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeJournal Article-
Appears in Collections:材料科學與工程學系
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