Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99243
標題: Tunability of p- and n-channel TiOx thin film transistors
作者: Peng, Wu-Chang
Chen, Yao-Ching
He, Ju-Liang
Ou, Sin-Liang
Horng, Ray-Hua
Wuu, Dong-Sing
武東星
Project: Scientific reports, Volume 8, Issue 1, Page(s) 9255.
摘要: 
To acquire device-quality TiOx films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiOx even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiOx film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm2/Vs, while their on/off current ratios are 1.7 × 104 and 2.5 × 105, respectively. The first presented p-type γ-TiO TFT is a major breakthrough for fabricating the TiOx-based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.
URI: http://hdl.handle.net/11455/99243
DOI: 10.1038/s41598-018-27598-5
Appears in Collections:材料科學與工程學系

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