Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99243
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dc.contributor.authorPeng, Wu-Changzh_TW
dc.contributor.authorChen, Yao-Chingzh_TW
dc.contributor.authorHe, Ju-Liangzh_TW
dc.contributor.authorOu, Sin-Liangzh_TW
dc.contributor.authorHorng, Ray-Huazh_TW
dc.contributor.authorWuu, Dong-Singzh_TW
dc.contributor.author武東星zh_TW
dc.date2018-06-18-
dc.date.accessioned2019-11-20T03:47:18Z-
dc.date.available2019-11-20T03:47:18Z-
dc.identifier.urihttp://hdl.handle.net/11455/99243-
dc.description.abstractTo acquire device-quality TiOx films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiOx even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiOx film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm2/Vs, while their on/off current ratios are 1.7 × 104 and 2.5 × 105, respectively. The first presented p-type γ-TiO TFT is a major breakthrough for fabricating the TiOx-based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.zh_TW
dc.language.isoenzh_TW
dc.relationScientific reports, Volume 8, Issue 1, Page(s) 9255.zh_TW
dc.titleTunability of p- and n-channel TiOx thin film transistorszh_TW
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1038/s41598-018-27598-5zh_TW
dc.awards2018zh_TW
item.openairetypeJournal Article-
item.fulltextwith fulltext-
item.grantfulltextrestricted-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
Appears in Collections:材料科學與工程學系
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