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|標題:||Stress-enhanced Cu-to-Cu Bonding for MEMS Packaging||作者:||Jenn-Ming Song
|關鍵字:||MEMS packaging;Cu-to-Cu bonding;air plasma bombardment;formic acid vapor||Project:||Sensors and Materials, Volume 30, Number 12(2)||摘要:||
To replace Al–Ge eutectic bonding, low-temperature direct Cu-to-Cu bonding was developed in this study. Lattice distortion and thus a hardened Cu subsurface conducted by air plasma bombardment, instead of surface activation, contributed to a compressive residual stress component and an accelerated Cu atom diffusion. This gave rise to a significant improvement in direct Cu bonding strength. Subjected to 3-min plasma exposure and the following deoxidation treatment using catalyzed formic acid vapor, robust Cu-to-Cu bonding with the joint strength up to 31.7 MPa can be achieved when bonded at 250 ℃ for 5 min under a loading pressure of 10 MPa in N2.
|Appears in Collections:||材料科學與工程學系|
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