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|標題:||Compact conduction band model for transition-metal dichalcogenide alloys||作者:||Kuan-Ting Chen
|關鍵字:||Monolayer;TMD alloy;Mo1 − xWxS2;Mobility;Tight-binding method||Project:||Microelectronics Reliability, Volume 83, April 2018, Pages 223-229||摘要:||
Monolayer transition metal dichalcogenide (TMD) alloys, such as Mo1 − xWxS2, owing to the unique electronic properties of the atomically thin two-dimensional layered structure, can be made into high performance metal–oxide–semiconductor field-effect transistors. The compact conduction band model of effective mass approximation (EMA) with the second nonparabolic correction is proposed for monolayer Mo1 − xWxS2. The three band tight-binding (TB) method is used for calculating the band structure for monolayer TMD alloys such as Mo1 − xWxS2, and a compact conduction band model is precisely developed to fit the band structures of TMD alloys calculated with tight-binding methods for the calculation of electron mobility. The impact of alloys on electron mobility of monolayer Mo1 − xWxS2 is discussed in this study.
|Appears in Collections:||電機工程學系所|
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