Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99284
標題: Compact conduction band model for transition-metal dichalcogenide alloys
作者: Kuan-Ting Chen
Ren-Yu He
Chia-Feng Lee
Ming-Ting Wu
Shu-Tong Chang
張書通
關鍵字: Monolayer;TMD alloy;Mo1 − xWxS2;Mobility;Tight-binding method
Project: Microelectronics Reliability, Volume 83, April 2018, Pages 223-229
摘要: 
Monolayer transition metal dichalcogenide (TMD) alloys, such as Mo1 − xWxS2, owing to the unique electronic properties of the atomically thin two-dimensional layered structure, can be made into high performance metal–oxide–semiconductor field-effect transistors. The compact conduction band model of effective mass approximation (EMA) with the second nonparabolic correction is proposed for monolayer Mo1 − xWxS2. The three band tight-binding (TB) method is used for calculating the band structure for monolayer TMD alloys such as Mo1 − xWxS2, and a compact conduction band model is precisely developed to fit the band structures of TMD alloys calculated with tight-binding methods for the calculation of electron mobility. The impact of alloys on electron mobility of monolayer Mo1 − xWxS2 is discussed in this study.
URI: http://hdl.handle.net/11455/99284
DOI: 10.1016/j.microrel.2017.04.022
Appears in Collections:電機工程學系所

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