Please use this identifier to cite or link to this item:
|標題:||Negative-Capacitance Fin Field-Effect Transistor Beyond the 7-nm Node||作者:||Chen, Kuan-Ting
|Project:||Journal of nanoscience and nanotechnology, Volume 18, Issue 10, Page(s) 6873-6878.||摘要:||
In this paper, we investigate the negative-capacitance fin field-effect (NC-FinFET) and extend the design beyond the 7-nm technology node. A 7-nm-node NC-FinFET is presented using the Landau-Khalatnikov equation and the physical equations of a 3D technology computer-aided design simulation. We propose a new NC-FinFET with double ferroelectric hafnium zircon dioxide layers. This device exhibits noticeable voltage gains in the sub-threshold region, can decrease subthreshold swing (SS) effectively, has a wide-ranged uniform SS lower than 60 mV/dec, and can downscale the threshold voltage without increasing the off current. The static noise margin of the static random access memory using the new NC-FinFET is simulated and shows good performance with improved SS and threshold voltage.
|Appears in Collections:||電機工程學系所|
Show full item record
Files in This Item:
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.