Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/99411
標題: 第一原理計算探討應力誘發ZnGa2O4/Al2O3異質界面與薄膜結構特性研究
Ab-initio Study of Strain-Induced ZnGa2O4/Al2O3 Heterojunctions and Film Structures
作者: 莊子廣
Tzu-Kuang Juang
關鍵字: 第一原理計算;氧化鋅鎵;鍵焓;氧空缺;first-principles calculation;ZnGa2O4;bond enthalpy;oxygen vacancy
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摘要: 
本研究係基於第一原理計算密度泛函理論研究氧化鋅鎵(ZnGa2O4)薄膜中晶體結構由Ga2O3(2̅01)轉變為ZnGa2O4(111)現象以及ZnGa2O4薄膜與藍寶石基底(Al2O3)之界面結構,計算Ga2O3(2̅01)和ZnGa2O4(111)晶格間距(d-spacing)分別為4.68 Å和4.78 Å,而當Ga2O3(2̅01)塊材模型在經過三維拉伸應變後總能呈逐漸增加趨勢,而ZnGa2O4(111)塊材模型在同樣應變範圍下總能趨勢則呈現逐漸下降,顯示出Ga2O3(2̅01)結構隨拉伸應變的影響轉變成ZnGa2O4(111)結構趨勢之可能性增加。而分析ZnGa2O4(111)和Al2O3(001)界面鍵焓中,具有6個O-Al鍵的界面模型為最佳的界面配置,而結構中觀察到的氧空缺結果也與其他研究結果一致。本研究成果可以解釋其他團隊研究結果中ZnGa2O4薄膜晶體結構轉變和界面狀態。

This study was based on the first-principles calculation of density functional theory. This study investigated the the transformation of a crystal structure from Ga2O3(2̅01) to ZnGa2O4(111) in ZnGa2O4 film and the interface structures between ZnGa2O4 films and sapphire substrates. The lattice spacing (d-spacing) of Ga2O3(2̅01) and ZnGa2O4(111) was calculated to be 4.68 Å and 4.78 Å, respectively. The total energy of the Ga2O3(2̅01) block model increased gradually after three-dimensional tensile strain, and the total energy of the ZnGa2O4(111) block model declined gradually in the same tensile area. This result demonstrated that the probabbility of the Ga2O3(2̅01) structure transforming into a ZnGa2O4(111) structure increased because of tensile strain. In the analysis of ZnGa2O4(111) and Al2O3(001) interface bond enthalpy, the interface model with six O-Al bonds exhibited the best interface configuration, and the model had an oxygen vacancy; these results accorded with the findings of other research. Our research results can explain the crystal structure transition and interface state of ZnGa2O4 thin films in the findings of other research teams.
URI: http://hdl.handle.net/11455/99411
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